absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave, 50 to 60 hz, gate open 800 v i t(rms) r.m.s on-state current t c = 99 c, full sine wave 4.0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 40/44 a i 2 t i 2 t for fusing tp = 10ms 4.5 a 2 s p gm peak gate power dissipation t c = 99 c, pulse width ? 1.0 us 3w p g(av) average gate power dissipation over any 20ms period 0.3 w i gm peak gate current tp = 20us, t j =125c 1.0 a v gm peak gate voltage tp = 20us, t j =125c 7.0 v v iso isolation breakdown voltage(r.m.s.) a.c. 1 minute 2500 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mass 2.0 g triac / standard gate features repetitive peak off-state voltage : 800v r.m.s on-state current ( i t(rms) = 4 a ) high commutation dv/dt isolation voltage ( v iso = 2500v ac ) general description this device is suitable for low power ac switching applica- tion, phase control application such as fan speed and tem- perature modulation control, i ndustrial and domestic lighting control and static switching relay. 1/6 DTF4A80 may 2005. rev. 0 copyright@ d&i semiconductor co., ltd., all rights reserved. 1 2 3 to-220f 2.t2 3.gate 1.t1 symbol ? ? ? ? i t(rms) = 4 a i tsm = 44 a bv drm = 800v ul no. e256958
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 1.0 ma v tm peak on-state voltage i t = 6 a, inst. measurement 1.6 v i + gt1 gate trigger current v d = 6 v, r l =10 ? 20 ma i - gt1 ? 20 i - gt3 ? 20 v + gt1 gate trigger voltage v d = 6 v, r l =10 ? 1.5 v v - gt1 ? 1.5 v - gt3 ? 1.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -2.0 a/ms, v d =2/3 v drm 5.0 v/ k i h holding current 5.0 ma r th(j-c) thermal impedance junction to case 4.0 c/w DTF4A80 2/6 ? notes : 1. pulse width ? 300us , duty cycle ? 2%
0.00.51.01.52.02.53.03.54.04.55.0 95 100 105 110 115 120 125 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) 25 ? i gm (1a) p g (av) (0.3w) p gm (3w) v gm (7v) gate voltage [v] gate current [ma] -50 0 50 100 150 10 1 10 2 10 3 x 100 (%) v gt (t o c) v + gt1 v - gt1 v - gt3 v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 5 10 15 20 25 30 35 60hz 50hz surge on-state current [a] time (cycles) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 10 -1 10 0 10 1 10 2 125 o c 25 o c on-state current [a] on-state voltage [v] DTF4A80 3/6 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature ? ? 2 t 360 t ? : conduction angle ? ? 2 t 360 t ? : conduction angle
10 -2 10 -1 10 0 10 1 10 2 1 10 transient thermal impedance [ o c/w] time (sec) -50 0 50 100 150 10 1 10 2 10 3 i + gt1 i - gt1 i - gt3 x 100 (%) i gt (t o c) i gt (25 o c) junction temperature [ o c] 4/6 DTF4A80 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? test procedure test procedure ? test procedure ?
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 13.47 13.73 0.530 0.540 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2.54 0.100 k5.08 0.200 l 2.51 2.62 0.099 0.103 m 1.25 1.55 0.049 0.061 n 0.45 0.63 0.018 0.025 o 0.6 1.0 0.024 0.039 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension 1. t1 2. t2 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 5/6 2 DTF4A80
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 8.4 8.66 0.331 0.341 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2.54 0.100 k5.08 0.200 l 2.51 2.62 0.099 0.103 m 1.25 1.55 0.049 0.061 n 0.45 0.63 0.018 0.025 o 0.6 1.0 0.024 0.039 p 5.0 0.197 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension, forming 1. t1 2. t2 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 2 p 6/6 DTF4A80
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